Thin film transistor array structure and manufacturing method thereof

摘要

A thin film transistor (TFT) array structure for a liquid crystal display (LCD) includes a panel, a first conductive layer, a middle layer, a second conductive layer, a passivation layer, and a black electrode layer. The first conductive layer is formed on the panel using filming technologies and a first photo-mask process. The middle layer is deposited and formed on the first conductive layer using a second photo-mask process. The second conductive layer is formed on the middle layer using a third photo-mask process and a first etching operation. The passivation layer is deposited and formed on the middle layer and the second conductive layer using a forth photo-mask process and a second etching operation. The black electrode layer formed on the passivation layer. The TFT array structure and the manufacturing method of the present disclosure reduce the consumption of the voltage and improve the display effect of the LCD.

主权项

1. A thin film transistor array structure for a liquid crystal display, comprising:
a panel; a first conductive layer formed on the panel using filming technologies and a first photo-mask process; a middle layer deposited and formed the first conductive layer using a second photo-mask process; a second conductive layer formed on the middle layer using a third photo-mask process and a first etching operation; a passivation layer deposited and formed the middle layer and the second conductive layer using a fourth photo-mask process and a second etching operation; a black electrode layer formed on the passivation layer wherein the black electrode layer comprises a pixel electrode and a thin film transistor light-shielding electrode which is electrically separated from the pixel electrode and is made of the same material as the pixel electrode.