发明名称 |
Method of grooving a chemical-mechanical planarization pad |
摘要 |
A method of forming a chemical mechanical polishing pad. The method includes polymerizing one or more polymer precursors and forming a chemical-mechanical planarization pad including a surface, forming grooves in the surface defining lands between the grooves, wherein the grooves have a first width, and shrinking the lands from a first land length (L1) at the surface to a second land length (L2) at the surface, wherein the second land length (L2) is less than the first land length (L1) and the grooves have a second width (W2) wherein (W1)≦(X)(W2), wherein (X) has a value in the range of 0.01 to 0.75. |
申请公布号 |
US8758659(B2) |
申请公布日期 |
2014.06.24 |
申请号 |
US201012893666 |
申请日期 |
2010.09.29 |
申请人 |
FNS Tech Co., Ltd. |
发明人 |
Lefevre Paul;Hsu Oscar K.;Wells David Adam;Aldeborgh John Erik;Jin Marc C.;Wu Guangwei;Mathew Anoop |
分类号 |
B24D18/00 |
主分类号 |
B24D18/00 |
代理机构 |
Grossman, Tucker, Perreault & Pfleger, PLLC |
代理人 |
Grossman, Tucker, Perreault & Pfleger, PLLC |
主权项 |
1. A method of forming a chemical-mechanical planarization pad, comprising:
polymerizing one or more polymer precursors and forming a chemical-mechanical planarization pad including a surface; removing material from the surface of said pad to form grooves in said surface and lands between said grooves, wherein said grooves have a first width (W1); and shrinking said lands from a first land length (L1) at said surface to a second land length (L2) at said surface, wherein said second land length (L2) is less than said first land length (L1) and said grooves have a second width (W2) wherein (W1)≦(X) (W2), wherein (X) has a value in the range of 0.01 to 0.75; wherein shrinking said lands comprises further polymerizing said polymer precursors after forming grooves in said surface.
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地址 |
Cheonan-si KR |