Ion implantation apparatus and ion implantation method

摘要

During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

主权项

1. An ion implantation method used in an ion implantation apparatus configured to transport an ion beam extracted from an ion source to a vacuum treatment chamber communicating with an end opening of a vacuum beam line through a vacuum beam line chamber, and implant the ion beam into a wafer in the vacuum treatment chamber,
wherein, during ion implantation into the wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of a location of a structure operating in a vacuum beam line chamber or the vacuum treatment chamber is obtained, and, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber, wherein an amount of an ion beam current is corrected using the obtained change in the vacuum conductance and the detected degree of vacuum at one or plural places, and a dose amount implanted into the wafer is controlled, and wherein the ion implantation apparatus is configured such that the ion beam is irradiated by beam scanning so as to scan in a line in an ion beam scanning direction in the vacuum beam line chamber, and the wafer in the vacuum treatment chamber is mechanically moved in a direction substantially perpendicular to the ion beam scanning direction.