A high electron mobility transistor is provided. The transistor includes a source electrode and a drain electrode disposed on a substrate to be spaced apart; a T-shaped gate electrode disposed between the source electrode and the drain electrode on the substrate; and a plurality of insulating films interposed between the substrate and the T-shaped gate electrode. The plurality of insulating films is composed of a first insulating film, a second insulating film, and a third insulating film. The third insulating film is interposed between the substrate and the head part of the T-shaped gate electrode to be in contact with the leg part of the T-shaped gate electrode. The second insulating film is interposed between the substrate and the head part of the T-shaped gate electrode to be in contact with the third insulating film. The first insulating film and the third insulating film stacked in order are interposed between the substrate and the head part of the T-shaped gate electrode to be in contact with the second insulating film.
申请公布号
KR20140075946(A)
申请公布日期
2014.06.20
申请号
KR20120143702
申请日期
2012.12.11
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
LIM, JONG WON;AHN, HO KYUN;CHANG, WOO JIN;KANG, DONG MIN;KIM, SEONG IL;LEE, SANG HEUNG;YOON, HYUNG SUP;JU, CHULL WON;KIM, HAE CHEON;MUN, JAE KYOUNG;NAM, EUN SOO