| 发明名称 |
RESISTIVE RANDOM ACCESS MEMORY (RRAM) AND METHOD OF MAKING |
| 摘要 |
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure electrically connected to the transistor. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer over the bottom electrode and having a same width as the top portion of the bottom electrode, and a top electrode over the resistive material layer and having a smaller width than the resistive material layer. |
| 申请公布号 |
US2014166961(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213714719 |
申请日期 |
2012.12.14 |
| 申请人 |
Company, Ltd. Taiwan Semiconductor Manufacturing |
发明人 |
LIAO Yu-Wen;CHU Wen-Ting;TU Kuo-Chi;YANG Chin-Chieh;CHANG Chih-Yang;CHEN Hsia-Wei |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A resistive random access memory (RRAM) cell, comprising:
a transistor; and an RRAM structure electrically connected to the transistor and having
a bottom electrode having a via portion and a top portion, wherein said via portion of the bottom electrode is embedded in a first RRAM stop layer;a resistive material layer over the bottom electrode and having a same width as the top portion of the bottom electrode; anda top electrode over the resistive material layer and having a smaller width than the resistive material layer.
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| 地址 |
US |
