发明名称 COMPOSITION FOR FORMING OVERLAY FILM, AND RESIST PATTERN FORMATION METHOD USING SAME
摘要 [Problem] To provide a composition for forming an overlay film and a pattern formation method using said composition, with which a pattern exhibiting excellent roughness and an excellent pattern shape can be formed in a pattern formation method using extreme ultraviolet light exposure. [Solution] This composition for forming an overlay film is characterized by including a solvent, and a fullerene derivative having a hydrophilic group. Furthermore, provided is a method in which said composition is applied to a resist surface, exposed to light, and developed, thereby forming a pattern. A polymer can also be included in said composition.
申请公布号 WO2014092149(A1) 申请公布日期 2014.06.19
申请号 WO2013JP83319 申请日期 2013.12.12
申请人 AZ ELECTRONIC MATERIALS MANUFACTURING (JAPAN) KK 发明人 WANG XIAOWEI;SUZUKI MASATO;OKAYASU TETSUO;PAWLOWSKI GEORG
分类号 G03F7/11;H01L21/027 主分类号 G03F7/11
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