发明名称 |
FINFET WITH MERGE-FREE FINS |
摘要 |
<p>A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions.</p> |
申请公布号 |
WO2014092846(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
WO2013US63794 |
申请日期 |
2013.10.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES |
发明人 |
HE, HONG;TSENG, CHIAHSUN;WANG, JUNLI;YEH, CHUN-CHEN;YIN, YUNPENG |
分类号 |
H01L29/786;H01L21/28 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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