发明名称 |
SEMICONDUCTOR MEMORY DEVICE, SYSTEM HAVING THE SAME AND PROGRAM METHOD THEREOF |
摘要 |
The present invention relates to a semiconductor memory device and a program method thereof. The program method according to an embodiment of the present invention includes: precharging a plurality of cell strings by providing a positive voltage to the plurality of cell strings through a common source line; and performing a program operation on selected memory cells by applying a program pulse to the selected memory cells. |
申请公布号 |
US2014169097(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201313948366 |
申请日期 |
2013.07.23 |
申请人 |
SK hynix Inc. |
发明人 |
SHIM Jung Woon |
分类号 |
G11C16/24 |
主分类号 |
G11C16/24 |
代理机构 |
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代理人 |
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主权项 |
1. A program method of a semiconductor memory device including a plurality of cell strings coupled between bit lines and a common source line, the program method comprising:
precharging the plurality of cell strings by providing a positive voltage to the plurality of cell strings through the common source line; and performing a program operation on selected memory cells by applying a program pulse to the selected memory cells.
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地址 |
Icheon-si KR |