发明名称 SEMICONDUCTOR MEMORY DEVICE, SYSTEM HAVING THE SAME AND PROGRAM METHOD THEREOF
摘要 The present invention relates to a semiconductor memory device and a program method thereof. The program method according to an embodiment of the present invention includes: precharging a plurality of cell strings by providing a positive voltage to the plurality of cell strings through a common source line; and performing a program operation on selected memory cells by applying a program pulse to the selected memory cells.
申请公布号 US2014169097(A1) 申请公布日期 2014.06.19
申请号 US201313948366 申请日期 2013.07.23
申请人 SK hynix Inc. 发明人 SHIM Jung Woon
分类号 G11C16/24 主分类号 G11C16/24
代理机构 代理人
主权项 1. A program method of a semiconductor memory device including a plurality of cell strings coupled between bit lines and a common source line, the program method comprising: precharging the plurality of cell strings by providing a positive voltage to the plurality of cell strings through the common source line; and performing a program operation on selected memory cells by applying a program pulse to the selected memory cells.
地址 Icheon-si KR