发明名称 |
USE DISPOSABLE GATE CAP TO FORM TRANSISTORS, AND SPLIT GATE CHARGE TRAPPING MEMORY CELLS |
摘要 |
A semiconductor device and method of making such device is presented herein. The method includes disposing a gate layer over a dielectric layer on a substrate and further disposing a cap layer over the gate layer. A first transistor gate is defined having an initial thickness substantially equal to a combined thickness of the cap layer and the gate layer. A first doped region is formed in the substrate adjacent to the first transistor gate. The cap layer is subsequently removed and a second transistor gate is defined having a thickness substantially equal to the thickness of the gate layer. Afterwards, a second doped region is formed in the substrate adjacent to the second transistor gate. The first doped region extends deeper in the substrate than the second doped region, and a final thickness of the first transistor gate is substantially equal to the thickness of the second transistor gate. |
申请公布号 |
WO2014093644(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
WO2013US74710 |
申请日期 |
2013.12.12 |
申请人 |
SPANSION LLC |
发明人 |
CHEN, CHUN;RAMSBEY, MARK;FANG, SHENQING |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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