发明名称 Manufacturing method of high purity aluminium nitride
摘要 PURPOSE: A method of manufacturing high purity aluminum nitride is provided to synthesize high purity aluminum nitride(ALN) by enabling homogeneous nitriding on the inner surfaces of aluminum source particles by performing a nitriding by coating the aluminum source particles with liquid phenol resin solution. CONSTITUTION: A method of manufacturing high purity aluminum nitride comprises the following steps: forming sol by dispersing aluminum source which includes aluminum (Al) components in organic solvent; forming a phenol resin solution in which phenol resin is dissolved; mixing the sol with the phenol resin solution and coating the aluminum source particles within the phenol resin; heat treating a mixed solution of the sol and the phenol resin solution; synthesizing ALN by nitriding heat treated products while injecting reaction gas including nitrogen components; and removing residual carbon contained in the nitrified outcome through a decarburization treatment. The aluminum source contained in the sol and phenol resin contained in the phenol resin solution is 1:0.42-3 in a weight ratio.
申请公布号 KR101409182(B1) 申请公布日期 2014.06.19
申请号 KR20120033768 申请日期 2012.04.02
申请人 发明人
分类号 B01J6/00;C01F7/66 主分类号 B01J6/00
代理机构 代理人
主权项
地址