发明名称 LOCALLY OPTIMIZED COLORING FOR CLEANING LITHOGRAPHIC HOTSPOTS
摘要 Approaches for cleaning/resolving lithographic hotspots (e.g., during a simulation phase of semiconductor design) are provided. Typically, a hotspot will be identified in a first polygon (having a first color) of a lithographic pattern or contour. Once a hotspot has been identified, a location (e.g., another portion of the first polygon or in a second polygon of the lithographic pattern having the first color) proximate the hotspot will be identified to place a stitch marker. Once the location has been identified, a stitch marker will be placed at that location. Then, a color of the stitch marked location will be changed to a second color, and the resulting lithographic pattern can be further processed to clean/resolve the hotspot.
申请公布号 US2014173533(A1) 申请公布日期 2014.06.19
申请号 US201213717816 申请日期 2012.12.18
申请人 GLOBALFOUNDRIES INC. 发明人 Sun Yuyang;Kallingal Chidambaram;Tarabbia Marc
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method for cleaning lithographic hotspots, comprising: identifying, using a computer device, a hotspot in a lithographic pattern; identifying a location proximate the hotspot to place a stitch marker; placing a stitch marker at the location; and re-coloring the lithographic pattern proximate the stitch marker to a different color to clean the hotspot, a structure of the lithographic pattern remaining unchanged.
地址 Grand Cayman KY