发明名称 |
LOCALLY OPTIMIZED COLORING FOR CLEANING LITHOGRAPHIC HOTSPOTS |
摘要 |
Approaches for cleaning/resolving lithographic hotspots (e.g., during a simulation phase of semiconductor design) are provided. Typically, a hotspot will be identified in a first polygon (having a first color) of a lithographic pattern or contour. Once a hotspot has been identified, a location (e.g., another portion of the first polygon or in a second polygon of the lithographic pattern having the first color) proximate the hotspot will be identified to place a stitch marker. Once the location has been identified, a stitch marker will be placed at that location. Then, a color of the stitch marked location will be changed to a second color, and the resulting lithographic pattern can be further processed to clean/resolve the hotspot. |
申请公布号 |
US2014173533(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201213717816 |
申请日期 |
2012.12.18 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Sun Yuyang;Kallingal Chidambaram;Tarabbia Marc |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. A method for cleaning lithographic hotspots, comprising:
identifying, using a computer device, a hotspot in a lithographic pattern; identifying a location proximate the hotspot to place a stitch marker; placing a stitch marker at the location; and re-coloring the lithographic pattern proximate the stitch marker to a different color to clean the hotspot, a structure of the lithographic pattern remaining unchanged.
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地址 |
Grand Cayman KY |