| 发明名称 |
METHOD AND SYSTEM FOR ETCHING PLURAL LAYERS ON A WORKPIECE INCLUDING A LOWER LAYER CONTAINING AN ADVANCED MEMORY MATERIAL |
| 摘要 |
Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor. |
| 申请公布号 |
US2014170856(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201313786850 |
申请日期 |
2013.03.06 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Nemani Srinivas D.;Ling Mang-mang;Pender Jeremiah T.;Ramaswamy Kartik;Nguyen Andrew;Belostotskiy Sergey G.;Agarwal Sumit |
| 分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of etching a stack of thin film layers on a workpiece including a lower thin film, said method comprising first etching said stack in an inductively coupled plasma reactor without exposing said lower thin film layer, and second etching said stack in a toroidal source plasma reactor to expose the lower thin film layer.
|
| 地址 |
Santa Clara CA US |
