发明名称 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING TEMPLATE FOR IMPRINT
摘要 In one embodiment, a pattern forming method includes irradiating a predetermined region of a mask member, provided on a substrate, with an ion beam to inject ions, forming a self-assembled material layer having a first polymer and a second polymer on the mask member, microphase-separating the self-assembled material layer, to form first polymer section containing the first polymer and second polymer section containing the second polymer, the second polymer section being provided on the predetermined regions, removing one of the first polymer section and the second polymer section and transferring a pattern shape of the other to the mask member, and processing the substrate with the mask member used as a mask.
申请公布号 US2014170565(A1) 申请公布日期 2014.06.19
申请号 US201313948855 申请日期 2013.07.23
申请人 Kabushiki Kaisha Toshiba 发明人 KANAMITSU Shingo
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A pattern forming method, comprising: irradiating a predetermined region of a mask member, provided on a substrate, with an ion beam to inject ions; forming a self-assembled material layer having a first polymer and a second polymer on the mask member; microphase-separating the self-assembled material layer, to form first polymer section containing the first polymer and second polymer section containing the second polymer, the second polymer section being provided on the predetermined regions; removing one of the first polymer section and the second polymer section and transferring a pattern shape of the other to the mask member; and processing the substrate with the mask member used as a mask.
地址 Tokyo JP