发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a first-conductivity-type semiconductor substrate, a first first-conductivity-type semiconductor layer, a second first-conductivity-type semiconductor layer, a second-conductivity-type bottom layer, a;Schottky metal, and a cathode electrode. The first first-conductivity-type semiconductor layer is provided on the semiconductor substrate and has a lower first-conductivity-type impurity concentration than the semiconductor substrate. The second first-conductivity-type semiconductor layer is provided on the first first-conductivity-type semiconductor layer and has a higher first-conductivity-type impurity concentration than the first first-conductivity-type semiconductor layer. The Schottky metal is provided on the second first-conductivity-type semiconductor layer. The Schottky metal contacts with partly the first first-conductivity-type semiconductor layer. The second-conductivity-type bottom layer is provided in the first first-conductivity-type semiconductor layer and is connected to the Schottky metal. The cathode electrode is connected to the semiconductor substrate.
申请公布号 US2014167201(A1) 申请公布日期 2014.06.19
申请号 US201313904869 申请日期 2013.05.29
申请人 Kabushiki Kaisha Toshiba 发明人 ARAI Masatoshi;TABUCHI Takashi
分类号 H01L29/872 主分类号 H01L29/872
代理机构 代理人
主权项 1. A semiconductor device comprising: a first-conductivity-type semiconductor substrate; a first first-conductivity-type semiconductor layer provided on the semiconductor substrate and having a lower first-conductivity-type impurity concentration than the semiconductor substrate; a second first-conductivity-type semiconductor layer provided on the first first-conductivity-type semiconductor layer and having a higher first-conductivity-type impurity concentration than the first first-conductivity-type semiconductor layer; a Schottky metal provided on the second first-conductivity-type semiconductor layer and contacting with partly the first first-conductivity-type semiconductor layer; a second-conductivity-type bottom layer provided in the first first-conductivity-type semiconductor layer and connected to the Schottky metal; and a cathode electrode connected to the semiconductor substrate.
地址 Tokyo JP