摘要 |
A semiconductor device includes a first-conductivity-type semiconductor substrate, a first first-conductivity-type semiconductor layer, a second first-conductivity-type semiconductor layer, a second-conductivity-type bottom layer, a;Schottky metal, and a cathode electrode. The first first-conductivity-type semiconductor layer is provided on the semiconductor substrate and has a lower first-conductivity-type impurity concentration than the semiconductor substrate. The second first-conductivity-type semiconductor layer is provided on the first first-conductivity-type semiconductor layer and has a higher first-conductivity-type impurity concentration than the first first-conductivity-type semiconductor layer. The Schottky metal is provided on the second first-conductivity-type semiconductor layer. The Schottky metal contacts with partly the first first-conductivity-type semiconductor layer. The second-conductivity-type bottom layer is provided in the first first-conductivity-type semiconductor layer and is connected to the Schottky metal. The cathode electrode is connected to the semiconductor substrate. |