EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

摘要

An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region.;The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

主权项

1. An epitaxial wafer comprising:
a growth substrate; a mask pattern disposed on the growth substrate and comprising a masking region and an opening region; and an epitaxial layer covering the mask pattern and comprising a void disposed on the masking region.