SILICON CARBIDE SEMICONDUCTOR DEVICES HAVING NITROGEN-DOPED INTERFACE

摘要

Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.

主权项

1. A method for fabricating a silicon carbide (SiC) device, comprising:
forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate; and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, wherein the thermally growing the oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.