METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE SUBSTRATE

摘要

A semiconductor substrate includes a sapphire substrate including an a-plane main surface and a groove in a surface thereof, the groove includes side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. Both side surfaces of the groove assume a c-plane of sapphire. An axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor. A plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor.

主权项

1. A semiconductor substrate, comprising:
a sapphire substrate including an a-plane main surface and comprising a groove in a surface thereof, the groove including side surfaces and a bottom surface; and a Group III nitride semiconductor layer formed on the sapphire substrate, wherein both side surfaces of the groove assume a c-plane of sapphire, wherein an axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor, and wherein a plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor.