SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed herein is a semiconductor device including a semiconductor substrate, a collector layer formed under the semiconductor substrate, a base layer formed on the semiconductor substrate, an emitter layer formed on the base layer, one or more trench barriers vertically penetrating the base layer and the emitter layer, a first gate insulating layer formed on the trench barriers and the emitter layer such that an upper portion of the emitter layer is partially exposed, a gate formed on the first gate insulating layer, a second gate insulating layer formed to cover the gate, and an emitter metal layer formed on an upper portion of the emitter layer exposed by the first gate insulating layer.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a collector layer formed under the semiconductor substrate; a base layer formed on the semiconductor substrate; an emitter layer formed on the base layer; one or more trench barriers vertically penetrating the base layer and the emitter layer; a first gate insulating layer formed on the trench barriers and the emitter layer such that an upper portion of the emitter layer is partially exposed; a gate formed on the first gate insulating layer; a second gate insulating layer formed to cover the gate; and an emitter metal layer formed on an upper portion of the emitter layer exposed by the first gate insulating layer.