| 发明名称 |
LIGHT EMITTING DEVICE AND METHODS FOR FORMING THE SAME |
| 摘要 |
The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure. |
| 申请公布号 |
US2014167096(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201414188499 |
申请日期 |
2014.02.24 |
| 申请人 |
HUGA OPTOTECH INC. |
发明人 |
TSAI Tzong-Liang;LI Yu-Chu;TSAI Chiung-Chi |
| 分类号 |
H01L33/62 |
主分类号 |
H01L33/62 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device, comprising:
an epitaxial stack structure; a II/V group compound contact layer directly formed on the epitaxial stack structure; a protrusion or recess type structure directly formed on the II/V group compound contact layer; and a conductive layer covering the protrusion or recess type structure.
|
| 地址 |
Taichung TW |
