SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a peeling method without causing a damage on a peeling layer thereby to enable peeling of not only the peeling layer of a small area but also the peeling layer of a large area all over with high yield; and provide a semiconductor device which achieves a light weight by attaching the peeling layer to various base materials and a manufacturing method of the semiconductor device; and provide a semiconductor device which achieves a light weight by attaching various elements represented by a TFT to a flexible film and a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a first material layer 11 arranged on a substrate; and a second material layer 12 arranged in contact with the first material layer 11. In the case where the first material layer before peeling has a tensile stress even when deposition by lamination or a heat treatment at a temperature of 500°C and over or an irradiation treatment by laser beams is performed and the second material layer has a compression stress, the first material layer can be successfully and easily separated in a layer of or at a boundary surface with the second material layer 12 by physical means.