发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which prevents unnecessary outflow of a resin material from a gap between island parts adjacent to each other of a lead frame at the time of manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises: a metal substrate 12; an electrically insulating lower layer resin 15s which lies on the metal substrate 12 and is thermally cured; an upper layer resin 16s which lies on the lower layer resin 15s and is thermally cured; a lead frame 18 which lies on the upper layer resin 16s and includes land parts 30a, 30b adjacent to each other; and semiconductor elements 22 arranged on the island parts 30. Thermal curing reaction of the upper layer resin 16s is completed after completion of thermal curing reaction of the lower layer resin 15s. Further, a part of the upper layer resin 16s enters a removed space S which is formed by removal of opposite side parts 32a, 32b opposite to each other of the island parts 30a, 30b on the upper layer resin 16s side.
申请公布号 JP2014112640(A) 申请公布日期 2014.06.19
申请号 JP20130127526 申请日期 2013.06.18
申请人 SANKEN ELECTRIC CO LTD;DENSO CORP 发明人 YOSHIZAKI SHIGEO;TANIZAWA HIDEKAZU;TANAKA ATSUHIKO;KOBAYASHI WATARU;SAKAI KOHEI
分类号 H01L23/50;H01L21/56 主分类号 H01L23/50
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