发明名称 |
Vertically Oriented Semiconductor Device and Shielding Structure Thereof |
摘要 |
The present disclosure involves a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an electronic device positioned over the substrate. The electronic device includes an opening. The semiconductor device includes a shielding device positioned over the substrate and surrounding the electronic device. The shielding device includes a plurality of elongate members. A subset of the plurality of elongate members extend through the opening of the electronic device. At least one of the electronic device and the shielding device is formed in an interconnect structure positioned over the substrate. |
申请公布号 |
US2014170777(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201414184090 |
申请日期 |
2014.02.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Cho Hsiu-Ying |
分类号 |
H01L23/552;H01L49/02 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
forming an electronic device over a substrate, wherein the electronic device is formed to include an opening; and forming a shielding device over the substrate, wherein the shielding device is formed to surround the electronic device, and wherein the shielding device is formed to include a plurality of elongate members, and wherein a subset of the plurality of elongate members extend through the opening of the electronic device.
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地址 |
Hsin-Chu TW |