| 摘要 |
PROBLEM TO BE SOLVED: To increase image quality.SOLUTION: The solid-state image sensor includes a photodiode disposed between an on-chip lens and a wiring layer. The photodiode is connected to a charge voltage conversion section that accumulates the charge obtained by photoelectric conversion. The charge voltage conversion section is connected to a charge accumulation section for adding a capacitance to the charge voltage conversion section via a capacitance selection switch. The charge accumulation section is disposed on a photodiode to overlap with a region of the photodiode where the light from and object does not enter. With this, since the solid-state image sensor ensures an enough region for disposing a photodiode etc., the respective elements are required to reduce the size. As a result, the light receiving sensitivity and the saturation signal amount are increased and high quality image can be obtained. The solid-state image sensor is applicable to solid-state image sensors. |
