发明名称 Memory Gate Landing Pad Made From Dummy Features
摘要 Embodiments described herein generally relate to landing gate pads for contacts and manufacturing methods therefor. A bridge is formed between two features to allow a contact to be disposed, at least partially, on the bridge. Landing the contact on the bridge avoids additional manufacturing steps to create a target for a contact.
申请公布号 US2014167128(A1) 申请公布日期 2014.06.19
申请号 US201213715828 申请日期 2012.12.14
申请人 SPANSION LLC 发明人 RAMSBEY Mark;Chen Chun;Kim Unsoon;Fang Shenqing
分类号 H01L29/78;H01L29/06;H01L29/66 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device, comprising: a substrate; a first memory cell gate on the substrate; a dummy feature on the substrate; a counterpart memory cell gate on the substrate, wherein the counterpart memory cell gate is located between two features so as to faun a bridge portion that is below opposing edges of the two features; and a contact at least partially on the bridge portion.
地址 Sunnyvale CA US
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