发明名称 |
Memory Gate Landing Pad Made From Dummy Features |
摘要 |
Embodiments described herein generally relate to landing gate pads for contacts and manufacturing methods therefor. A bridge is formed between two features to allow a contact to be disposed, at least partially, on the bridge. Landing the contact on the bridge avoids additional manufacturing steps to create a target for a contact. |
申请公布号 |
US2014167128(A1) |
申请公布日期 |
2014.06.19 |
申请号 |
US201213715828 |
申请日期 |
2012.12.14 |
申请人 |
SPANSION LLC |
发明人 |
RAMSBEY Mark;Chen Chun;Kim Unsoon;Fang Shenqing |
分类号 |
H01L29/78;H01L29/06;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a substrate; a first memory cell gate on the substrate; a dummy feature on the substrate; a counterpart memory cell gate on the substrate, wherein the counterpart memory cell gate is located between two features so as to faun a bridge portion that is below opposing edges of the two features; and a contact at least partially on the bridge portion.
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地址 |
Sunnyvale CA US |