| 发明名称 |
INCREASING THE BREAKDOWN VOLTAGE OF A METAL OXIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a first well, a second well, and a separator structure. The first well and the second well are implanted in the semiconductor substrate. The separator structure is also implanted in the semiconductor substrate and separates the first well and the second well so that the first well and the second well do not contact each other. |
| 申请公布号 |
US2014167173(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201213715740 |
申请日期 |
2012.12.14 |
| 申请人 |
BROADCOM CORPORATION |
发明人 |
Ito Akira |
| 分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first well implanted in a semiconductor substrate; a second well implanted in the semiconductor substrate; and a separator structure implanted in the semiconductor substrate that separates the first well and the second well so that the first well and the second well do not contact each other.
|
| 地址 |
Irvine CA US |
