SEMICONDUCTOR DEVICE AND FABRICATION METHOD

摘要

Semiconductor devices and fabrication methods for simultaneously forming a 3T-FinFET and a 4T-FinFET on a same substrate are provided. A first fin and a second fin can be formed on a semiconductor substrate. The first fin has a top surface higher than the second fin. A first gate dielectric layer and a first gate can be formed across the first fin. A second gate dielectric layer and a second gate can be formed across the second fin. An interlayer dielectric layer can be formed to cover the first gate, the second gate, and the semiconductor substrate. A first portion of the interlayer dielectric layer, a portion of the first gate, and a portion of the first gate dielectric layer, over the first fin, and a second portion of the interlayer dielectric layer over the second fin can be removed to expose the second gate.

主权项

1. A method for forming a semiconductor device, comprising:
providing a semiconductor substrate; forming a first fin and a second fin on the semiconductor substrate, wherein the first fin has a top surface higher than the second fin from the semiconductor substrate; forming a first gate dielectric layer across the first fin, a first gate on the first gate dielectric layer, a second gate dielectric layer across the second fin, and a second gate on the second gate dielectric layer; forming an interlayer dielectric layer to cover the first gate, the second gate, and the semiconductor substrate; and removing a first portion of the interlayer dielectric layer, a portion of the first gate, and a portion of the first gate dielectric layer, over the top surface of the first fin, and a second portion of the interlayer dielectric layer over the second fin to expose the second gate over the second fin, wherein the second gate remains intact while removing, according to a height difference between the first fin and the second fin.