SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.

主权项

1. A semiconductor light emitting element comprising:
a substrate; and an n-side semiconductor layer stacked on the substrate; an active layer stacked on the n-side semiconductor layer; and a p-side semiconductor layer stacked on the active layer, the active layer having a multiple quantum well structure including a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers, and among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively having a greater thickness than a thickness of one of the barrier layers disposed on a side close to the n-side semiconductor layer.