IMAGE REVERSAL WITH AHM GAP FILL FOR MULTIPLE PATTERNING

摘要

Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.

主权项

1. A method of processing a semiconductor substrate, the method comprising:
transferring a pattern from an overlying photoresist to a core ashable hardmask (AHM) layer; depositing a conformal film over the patterned core AHM layer on the substrate; depositing a gap-fill AHM layer over the conformal film; planarizing the substrate with a process that etches both the conformal film and the gap-fill AHM layer to remove the conformal film overlying the core AHM layer; and selectively etching the conformal film to form a mask.