| 摘要 |
An object to be processed 1 is irradiated with laser light L with a standard pulse waveform, so as to form a molten processed region 131, which has a larger size in the thickness direction of the object 1 and is easy to generate a fracture 24 in the thickness direction of the object 1, within a silicon wafer 111, and with laser light L with a retarded pulse waveform, so as to form a molten processed region 132, which has a smaller size in the thickness direction of the object 1 and is hard to generate the fracture 24 in the thickness direction of the object 1, within a silicon wafer 112. |
