发明名称 Technique to suppress bitline leakage current
摘要 Methods and apparatus that may help reduce standby current in memory devices are provided. By separating equalizing and precharging functions into separate circuit structures, current paths between a source of precharge voltage and a defective wordline (e.g., having an inadvertent short to a bitline due to a manufacturing defect) may be eliminated.
申请公布号 US7414896(B2) 申请公布日期 2008.08.19
申请号 US20050225465 申请日期 2005.09.13
申请人 INFINEON TECHNOLOGIES AG 发明人 OH JONG-HOON
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项
地址