发明名称 GALLIUM NITRIDE MATERIAL PROCESSING AND RELATED DEVICE STRUCTURES
摘要 Gallium nitride material devices and related processes are described. In some embodiments, an N-face of the gallium nitride material region is exposed by removing an underlying region.
申请公布号 EP2272109(A4) 申请公布日期 2014.06.18
申请号 EP20090739211 申请日期 2009.04.29
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 PINER, EDWIN, LANIER;JOHNSON, JERRY, WAYNE;ROBERTS, JOHN, CLAASSEN
分类号 H01L33/00;H01L29/20 主分类号 H01L33/00
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