| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique which allows for reduction of sublimate generated from a coating film on a wafer W, when it is heated, and adhering to the inside of an exhaust tube 30. <P>SOLUTION: When performing the heating treatment of a wafer W on which a coating film is formed in a processing container 21, an organic material generated from the coating film, i.e., a sublimate, is collected forcibly in a collection section 4 provided in the upstream of an exhaust tube 30. Plasma is generated by applying a high frequency voltage to an electrode 42 provided in the collection section 4, and then active species of oxygen is generated by activating oxygen contained in the exhaust flow and supplied to the adhering sublimate thus decomposing and removing the sublimate. Consequently, the amount of sublimate adhering to the inside of the exhaust tube 30 is reduced, and the frequency of maintenance can be reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
