发明名称 |
Memory device employing magnetic domain wall movement |
摘要 |
Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer. |
申请公布号 |
EP1901305(B1) |
申请公布日期 |
2014.06.18 |
申请号 |
EP20070116415 |
申请日期 |
2007.09.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, CHEE-KHENG;KIM, EUN-SIK;LEE, SUNG-CHUL |
分类号 |
G11C11/14;G11C19/08 |
主分类号 |
G11C11/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|