| 摘要 |
The present invention is to provide a memory circuit capable of writing at a low voltage having an improved writing efficiency. A resistor divider including two resistors, which is connected to a control gate of a P-channel non-volatile memory element, and two switch transistors connected in parallel to the two resistors are used to adjust the potential of the control gate so that a potential of a floating gate is set in the vicinity of a threshold of the memory element in writing. In the P-channel non-volatile memory element, since the potential of the floating gate is set in the vicinity of the threshold of the memory element, the electric field between a pinch-off point and a drain becomes stronger so that hot carriers are more likely to be generated. Consequently, the write characteristics are improved, and writing can be performed at a low voltage. |
