| 摘要 |
According to an embodiment of the present invention, disclosed are a light emitting diode, a method for manufacturing a light emitting diode, a light emitting diode package, and a lighting system. The light emitting diode according to an embodiment of the present invention comprises: a first conductive semiconductor layer (112); an active layer (114) formed on the first conductive semiconductor layer (112); a second conductive InxGa1-xN layer (wherein, 0<x<1)(126) formed on the active layer (114); a second conductive GaN-based layer (128) formed on the second conductive InxGa1-xN layer (126); and a second conductive semiconductor layer (116) formed on the second conductive GaN-based layer (128). |
