| 摘要 |
According to an embodiment of the present invention, disclosed are a light emitting diode, a method for manufacturing a light emitting diode, a light emitting diode package, and a lighting system. The light emitting diode according to an embodiment of the present invention comprises: a first conductive semiconductor layer (112); a GaN-based superlattice layer (124) formed on the first conductive semiconductor layer (112); an active layer (114) formed on the GaN-based superlattice layer (124); a second conductive GaN-based layer (129) formed on the active layer (114); and a second conductive semiconductor layer (116) formed on the second conductive GaN-based layer, wherein the second conductive GaN-based layer (129) includes a second conductive AlzGa(1-z)N layer (wherein, 0<z<1)(126) of a first concentration formed on the active layer (114); and a second conductive AlGaN-based supperlattice layer (128) formed on the second conductive AlzGa(1-z)N layer (126) of the first concentration. |
