发明名称 |
Method of producing a heterostructure with local adaptation of the thermal expansion coefficient |
摘要 |
A method of producing a heterostructure by bonding at least one first substrate having a first thermal expansion coefficient onto a second substrate having a second thermal expansion coefficient, with the first thermal expansion coefficient being different from the second thermal expansion coefficient. Prior to bonding, trenches are formed in one of the two substrates from the bonding surface of the substrate. The trenches are filled with a material having a third thermal expansion coefficient lying between the first and second thermal expansion coefficients. |
申请公布号 |
US8754505(B2) |
申请公布日期 |
2014.06.17 |
申请号 |
US200913148353 |
申请日期 |
2009.12.24 |
申请人 |
Soitec |
发明人 |
Colnat Cyrille |
分类号 |
H01L23/544;H01L21/30;H01L21/46 |
主分类号 |
H01L23/544 |
代理机构 |
TraskBritt |
代理人 |
TraskBritt |
主权项 |
1. A method of producing a heterostructure that comprises bonding a bonding surface of at least one first substrate having a first thermal expansion coefficient directly onto a bonding surface of a second substrate having a second thermal expansion coefficient, with the first thermal expansion coefficient being different from the second thermal expansion coefficient, the method further comprising, prior to bonding:
forming trenches in the bonding surfaces of both the first and second substrates; filling the formed trenches with a filling material having a third thermal expansion coefficient that has a value that is between the first and second thermal expansion coefficients in order to reduce deformations or strains that would otherwise be observed during heat treatments of bonded substrates that do not include such filled trenches with the filling material also deposited over the bonding surfaces of the first and second substrates; and planarizing the filling material to bonding to remove the filling material from the bonding surfaces but not from the trenches.
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地址 |
Bernin FR |