Semiconductor device with metal gate

摘要

The present disclosure provides a method for making a semiconductor device having metal gate stacks. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a first metal layer on the high k dielectric material layer; forming a silicon layer on the first metal layer; patterning the silicon layer, the first metal layer and the high k dielectric material layer to form a gate stack; and performing a silicidation process to fully change the silicon layer into a silicide electrode.

主权项

1. A semiconductor device, comprising:
a source and a drain in a semiconductor substrate; a gate stack disposed on the semiconductor substrate and interposed between the source and the drain, wherein the gate stack includes:
a high k dielectric layer disposed on the semiconductor substrate;a metal layer disposed on the high k dielectric layer; anda silicide gate layer directly disposed on the metal layer, the silicide gate layer having a first thickness; and silicide features formed on the source and the drain, the silicide features having a second thickness substantially less than the first thickness, wherein the gate stack has a work function, and wherein the gate stack is configured such that the metal layer determines the work function.