Methods of forming laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers

摘要

A lateral diffused metal oxide semiconductor (LDMOS) transistor is provided. The LDMOS transistor includes a substrate having a source region, channel region, and a drain region. A first implant is formed to a first depth in the substrate. A gate electrode is formed over the channel region in the substrate between the source region and the drain region. A second implant is formed in the source region of the substrate; the second implant is laterally diffused under the gate electrode a predetermined distance. A third implant is formed to a second depth in the drain region of the substrate; the second depth is less than the first depth. A method for forming the LDMOS transistor is also provided.

主权项

1. A method for forming a lateral diffused metal oxide semiconductor (LDMOS) transistor, the method comprising:
providing a substrate having a first surface and a second surface, wherein the first surface comprises an epitaxial layer, and wherein the first surface comprises a drain region, a source region, and a channel region for the LDMOS transistor; implanting a first dopant of a first type having a first doping concentration in the first surface of the substrate, wherein the first dopant is implanted to a first depth, and wherein the first dopant is implanted in the source region, the drain region, and the channel region; forming a gate electrode over the channel region of the first surface of the substrate; selectively implanting a second dopant of a second type in the source region of the first surface, the second dopant having a second doping concentration, wherein the second dopant laterally diffusing under the gate electrode a predetermined distance, and wherein the second type is different than the first type; selectively implanting a third dopant of the first type in the drain region of the first surface, the third dopant having a third doping concentration, wherein the third dopant is implanted to a second depth, the second depth being less than the first depth; forming a source implant in the source region; and forming a drain implant in the drain region.