Patterning process and resist composition

摘要

A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

主权项

1. A pattern forming process comprising the steps of:
applying a resist composition onto a substrate, the resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent or comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group and recurring units having a sulfonium salt, and an organic solvent, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film in an organic solvent-based developer to form a negative pattern wherein the unexposed region of film is dissolved away and the exposed region of film is not dissolved.