Method for producing a connection region on a side wall of a semiconductor body

摘要

A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed.

主权项

1. A method for making a semiconductor device, the method comprising:
forming a first trench at a first surface of a semiconductor body, the first trench extending into the semiconductor body, wherein the first trench is formed in two parts, wherein a first trench part is narrower than a second trench part, wherein the first trench part comprises a first central axis in a direction perpendicular to the semiconductor body, wherein the second trench part comprises a second central axis in a direction perpendicular to the semiconductor body, and wherein the first central axis is laterally spaced from the second central axis; forming an insulation layer on side walls and on a bottom surface of the first trench such that the first trench is only partially filled; filling an unfilled part of the first trench with an electrically conductive material; forming a separating trench adjacent the first trench in such a way that a side wall of the separating trench directly adjoins the first trench part; and removing at least a portion of the insulation layer that adjoins the separating trench such that at least some of the electrically conductive material in the first trench is exposed, wherein the first trench part extends deeper into the semiconductor body than the second trench part, and wherein the separating trench extends deeper into the semiconductor body than the first trench.