GALLIUM NITRIDE SUBSTRATE AND A FABRICATING METHOD THEREOF TO REDUCE STRESS

摘要

An epitaxial growth dissimilar substrate according to the present invention comprises a substrate; a buffer layer having a nitride semiconductor formed on the substrate; at least one crack prevention hole extending to the substrate through the buffer layer; and a single crystal nitride semiconductor formed on the buffer layer. Thus, the epitaxial growth dissimilar substrate has crack prevention holes of uniform shape and size at regular intervals to reduce a contact area with a single crystal layer, to prevent cracks, and to prevent bending, thereby increasing the area and the diameter of a single crystal gallium nitride substrate.