SEMICONDUCTOR DEVICE HAVING BLOCKING LAYER AND METHOD OF FORMING THE SAME

摘要

A lower line of second conductivity type impurities is formed on a substrate of first conductivity type impurities. A switching device is formed on the lower line. A first blocking layer is formed between the lower line and the switching device. The first blocking layer contains C, Ge, or their combination. A second blocking layer can be formed between the substrate and the lower line.