Semiconductor device and manufacturing method thereof

摘要

A semiconductor device and its manufacturing method are provided. The semiconductor device comprises: a semiconductor substrate of a first semiconductor material, a gate structure on the semiconductor substrate, a crystal lattice dislocation line in a channel under the gate structure for generating channel stress, wherein the crystal lattice dislocation line being at an angle to the channel.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate of a first semiconductor material, a gate structure on the semiconductor substrate, a groove formed in the semiconductor substrates on either side of the gate structure, and a crystal lattice dislocation line in a channel under the gate structure for generating channel stress, wherein the crystal lattice dislocation line is formed by pre-amorphization implantation and annealing, wherein after pre-amorphization implantation, a first strained layer is deposited on the semiconductor substrate before annealing, said first strained layer at least covers the inner surface of the groove, wherein the first strained layer is removed after annealing, and wherein the crystal lattice dislocation line being at an angle to the channel.