| 摘要 |
When a mixed gas of trichlorosilane and dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 1000 to 1100° C., preferably, 1040 to 1080° C. When dichlorosilane is used as source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer within a temperature range of 900 to 1150° C., preferably, 1000 to 1150° C. According to this, a silicon epitaxial wafer, which has low haze level, excellent flatness (edge roll-off), and reduced orientation dependence of epitaxial growth rate, and is capable of responding to the higher integration of semiconductor devices, can be obtained, and this epitaxial wafer can be used widely in production of semiconductor devices. |
| 主权项 |
1. A method for producing an epitaxial wafer by epitaxially growing a silicon layer on a surface of a silicon wafer, the method comprising:
using a mixed gas of trichlorosilane and dichlorosilane as source gas, and epitaxially growing the silicon layer within a temperature range of 1000 to 1100° C.; and preventing a haze level of the resulting epitaxial wafer from getting worse than a haze level of polished wafer, and making the resulting epitaxial wafer excellent in flatness; and the temperature region of the epitaxial growth is set in the range of 1040 to 1080° C., the haze level of the resulting epitaxial wafer is controlled in the range of 0.050 to 0.080 ppm when measured in DWN mode using a KLA-Tencor particle counter (SP-1), and the flatness is improved so that edge roll-off is within a range of −20 nm to +20 nm, and when the orientation dependence of epitaxial growth rate is evaluated with a film thickness of an epitaxial layer along an orientation of 45° relative to reference crystal orientation, given that a film thickness of the epitaxial layer along reference crystal orientation be taken as 1, the film thickness of the epitaxial layer along the orientation of 45° is controlled to be 0.985 or more.
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