Semiconductor device having capacitors fixed to support patterns and method for manufacturing the same

摘要

A semiconductor device containing a cylindrical shaped capacitor and a method for manufacturing the same is presented. The semiconductor device includes a plurality of storage nodes and a support pattern. The plurality of storage nodes is formed over a semiconductor substrate. The support pattern is fixed to adjacent storage nodes in which the support pattern has a flowable insulation layer buried within the support pattern. The buried flowable insulation layer direct contacts adjacent storage nodes.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a mold insulation layer over a semiconductor substrate; forming support layers on the mold insulation layer, the support layers having a flowable insulation layer inserted between the support layers; defining a plurality of holes by etching through portions of the support layers and through portions of the mold insulation layer; forming cylinder type storage nodes in the respective holes; etching selectively the support layers to form a support pattern that fixes adjacent storage nodes together such that the support pattern has a structure in which the flowable insulation layer contained within the support pattern and the flowable insulation layer is buried within the support pattern; and removing the mold insulation layer which remains exposed after forming the support pattern.