发明名称 METHOD OF PREPARING GRAPHENE
摘要 <p>An aspect of the present invention provides a method for manufacturing graphene that is based on chemical vapor deposition and is without using a metal catalyst layer. An exemplary embodiment of the method for manufacturing graphene according to an aspect of the present invention comprises a step of growing graphene on the surface of a SiO_x nanowire by supplying raw material gas including a carbon-containing compound into a reaction chamber for chemical vapor deposition having the SiO_x nanowire deposited therein.</p>
申请公布号 KR20140074097(A) 申请公布日期 2014.06.17
申请号 KR20120142315 申请日期 2012.12.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JONG JIN;KIM, BYUNG SUNG;JEON, SANG HUN;WHANG, DONG MOK
分类号 C01B31/02;B82B1/00;B82B3/00;C01B33/113 主分类号 C01B31/02
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