<p>An aspect of the present invention provides a method for manufacturing graphene that is based on chemical vapor deposition and is without using a metal catalyst layer. An exemplary embodiment of the method for manufacturing graphene according to an aspect of the present invention comprises a step of growing graphene on the surface of a SiO_x nanowire by supplying raw material gas including a carbon-containing compound into a reaction chamber for chemical vapor deposition having the SiO_x nanowire deposited therein.</p>
申请公布号
KR20140074097(A)
申请公布日期
2014.06.17
申请号
KR20120142315
申请日期
2012.12.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, JONG JIN;KIM, BYUNG SUNG;JEON, SANG HUN;WHANG, DONG MOK