Hybrid interconnect structure for performance improvement and reliability enhancement

摘要

A hybrid interconnect structure is provided that includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive material is laterally spaced apart from the dielectric material by a diffusion barrier, a dense dielectric spacer and, optionally, an air gap. The presence of the dense dielectric spacer results in a hybrid interconnect structure that has improved reliability and performance. Moreover, the hybrid interconnect structure provides for better process control which leads to the potential for high volume manufacturing.

主权项

1. An interconnect structure comprising:
a lower interconnect level comprising a first dielectric material having a first conductive material embedded therein; an upper interconnect level comprising a second dielectric material of unitary composition and having at least one opening that is in contact with said first conductive material of the lower interconnect level, wherein said second dielectric material of unitary composition has a second conductive material embedded within said at least one opening that is laterally spaced apart from said second dielectric material of unitary composition by a diffusion barrier and a dense dielectric spacer, said diffusion barrier having a first vertical sidewall surface and a second vertical sidewall surface, said first vertical sidewall of said diffusion barrier is in contact with at least said second conductive material, and wherein said second vertical sidewall surface of said diffusion barrier has a first portion in directly physical contact with a sidewall surface of said dense dielectric spacer and a second portion in direct physical contact with a sidewall surface of said second dielectric material of unitary composition; and an air gap located between said dense dielectric spacer and an upper portion of said second dielectric material of unitary composition.