Metal and silicon containing capping layers for interconnects

摘要

Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an atomic layer. In certain embodiments, the methods involve exposing the copper surface first to a metal containing precursor to form an atomic layer of adsorbed precursor or metal atoms, which may optionally be converted to an oxide, nitride, carbide, or the like by, e.g., a pinning treatment. Subsequent exposure to a silicon-containing precursor may proceed with or without metallic atoms being converted.

主权项

1. A method of forming a capping layer on a current carrying metal line of a semiconductor device, the method comprising:
(a) delivering a metal-containing precursor to a reaction chamber holding a partially fabricated semiconductor device having an exposed surface of a metal line, wherein the metal-containing precursor adheres or bonds to the exposed surface of the metal line, wherein the metal-containing precursor comprises a first metal; (b) delivering a silicon-containing precursor to the reaction chamber; and (c) forming the capping layer on the metal line by allowing at least a portion of the silicon-containing precursor to interact with the exposed surface of the metal line and/or interact with the metal-containing precursor or first metal.