发明名称 Semiconductor device with a semiconductor chip connected in a flip chip manner
摘要 A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.
申请公布号 US8754535(B2) 申请公布日期 2014.06.17
申请号 US201313782580 申请日期 2013.03.01
申请人 Rohm Co., Ltd. 发明人 Tanida Kazumasa;Miyata Osamu
分类号 H01L23/495;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/495
代理机构 Rabin & Berdo, P.C. 代理人 Rabin & Berdo, P.C.
主权项 1. A semiconductor device, comprising: a solid state device having a surface, a semiconductor chip having a functional surface, a connecting member provided between the surface of the solid state device and the functional surface of the semiconductor chip, the connecting member extending over a distance between the surface of the solid state device and the functional surface of the semiconductor chip and having a constant width, a sealing layer, greater in size than the semiconductor chip, that completely seals a space between the solid state device and the semiconductor chip, and an electrode formed on the surface of the solid state device, and arranged outside of an edge of the sealing layer, wherein a lateral distance between an outer periphery of the semiconductor chip and the edge of the sealing layer is 0.1 mm or more.
地址 Kyoto JP